Unit information: Integrated Circuit Electronics in 2014/15

Unit name	Integrated Circuit Electronics
Unit code	EENGM6011
Credit points	10
Level of study	M/7
Teaching block(s)	Teaching Block 1 (weeks 1 - 12)
Unit director	Professor. Rorison
Open unit status	Not open
Pre-requisites	EENG36000
Co-requisites	None
School/department	School of Electrical, Electronic and Mechanical Engineering
Faculty	Faculty of Engineering

Description including Unit Aims

Over the last thirty years, integrated circuits have played a central role in the development of complex electronic systems that can be manufactured at a relatively low cost to the consumer. This unit provides an introduction to integrated circuit technologies; covering fabrication processes, device construction and operation, and circuit configurations that are well suited to integrated manufacture because they take advantage of the ready availability of well-matched components. There will be some formative coursework related to fabrication and circuit performance where feedback will be given.

Elements

Fabrication Issues Prof J.M. Rorison

• Fabrication and issues of fabrication of bipolar transistors

• Fabrication and issues of fabrication of CMOS FET's

• Operation of bipolar transistors related to fabrication specification

• Operation of CMOS FET's related to fabrication specification

• GaAs and Si-Ge technologies for faster devices

• Future device issues

Circuit Issues Dr K.A. Morris

• Design of a single stage actively loaded CMOS amplifier

• Design of a current mirror using bipolar technology

• Design of a current mirror using CMOS technology

• Design of a differential amplifier using bipolar technology

• Design of a differential amplifier using CMOS technology

• Design of operational amplifier in CMOS

Intended Learning Outcomes

After successfully completing the unit, a student will be able to:

• Describe and explain the basis of operation of bipolar transistors and FET devices in terms of the physical mechanisms involved.
• Outline the steps involved in the fabrication of ICs and describe the physical processes used and the limitations they impose on device and circuit operation.
• Explain how the physical design of the bipolar and FET device impacts on device and circuit performance.
• Design and analyse a current mirror using bipolar and CMOS technology
• Design a differential amplifier using bipolar and CMOS technology
• Design a simple operational amplifier using CMOS technology
• Design a single stage CMOS actively loaded amplifier

Teaching Information

Combination of lectures and laboratory sessions.

Assessment Information

Name: Terminal Exam

Type: Exam 100% of final mark

Description: 2 hour written paper

Reading and References

• Gray, P.R., & Meyer, R.G., Analysis & Design of Analog Integrated Circuits (3rd Ed.), John Wiley & Sons Inc. 1993, ISBN 0471574953

• Sedra and Smith, Microelectronic Circuits, 5th Edition, 2004. ISBN 0-19-514252-7

• Craig Casey, Jr. H., Devices for Integrated Circuits, John Wiley& Sons Inc, 1999. ISBN 0471171344