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Unit information: Integrated Circuit Electronics in 2016/17

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Unit name Integrated Circuit Electronics
Unit code EENGM6011
Credit points 10
Level of study M/7
Teaching block(s) Teaching Block 1 (weeks 1 - 12)
Unit director Professor. Rorison
Open unit status Not open




School/department Department of Electrical & Electronic Engineering
Faculty Faculty of Engineering


Over the last thirty years, integrated circuits have played a central role in the development of complex electronic systems that can be manufactured at a relatively low cost to the consumer. This unit provides an introduction to integrated circuit technologies; covering fabrication processes, device construction and operation, and circuit configurations that are well suited to integrated manufacture because they take advantage of the ready availability of well-matched components. There will be some formative coursework related to fabrication and circuit performance where feedback will be given.


Fabrication Issues Prof J.M. Rorison

  • Fabrication and issues of fabrication of bipolar transistors
  • Fabrication and issues of fabrication of CMOS FET's
  • Operation of bipolar transistors related to fabrication specification
  • Operation of CMOS FET's related to fabrication specification
  • GaAs and Si-Ge technologies for faster devices
  • Future device issues

Circuit Issues Dr K.A. Morris

  • Design of a single stage actively loaded CMOS amplifier
  • Design of a current mirror using bipolar technology
  • Design of a current mirror using CMOS technology
  • Design of a differential amplifier using bipolar technology
  • Design of a differential amplifier using CMOS technology
  • Design of operational amplifier in CMOS

Intended learning outcomes

After successfully completing the unit, a student will be able to:

  1. Describe and explain the basis of operation of bipolar transistors and FET devices in terms of the physical mechanisms involved.
  2. Outline the steps involved in the fabrication of ICs and describe the physical processes used and the limitations they impose on device and circuit operation.
  3. Explain how the physical design of the bipolar and FET device impacts on device and circuit performance.
  4. Design and analyse a current mirror using bipolar and CMOS technology
  5. Design a differential amplifier using bipolar and CMOS technology
  6. Design a simple operational amplifier using CMOS technology
  7. Design a single stage CMOS actively loaded amplifier

Teaching details

Combination of lectures and laboratory sessions.

Assessment Details

Exam, 2 hours, 100% (All ILOs)

Reading and References

  • Gray, P.R., & Meyer, R.G., Analysis & Design of Analog Integrated Circuits (3rd Ed.), John Wiley & Sons Inc. 1993, ISBN:0471574953
  • Sedra and Smith, Microelectronic Circuits, 5th Edition, 2004. ISBN:0-19-514252-7
  • Craig Casey, Jr. H., Devices for Integrated Circuits, John Wiley& Sons Inc, 1999. ISBN:0471171344